PART |
Description |
Maker |
HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB 43A/ 1200V/ NPT Series N-Channel IGBT 43A 1200V NPT Series N-Channel IGBT
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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HGT1S10N12 HGT1S10N120BNS HGTP10N120BN HGTG10N120B |
From old datasheet system 35A 1200V NPT Series N-Channel IGBT 35A/ 1200V/ NPT Series N-Channel IGBT 36 MACROCELL 3.3 VOLT ISP CPLD 35 A, 1200 V, N-CHANNEL IGBT, TO-247 35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, N-CHANNEL IGBT
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INTERSIL[Intersil Corporation] Intersil, Corp.
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BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT 300 A, 1200 V, N-CHANNEL IGBT 100 A, 1000 V, N-CHANNEL IGBT 100 A, 1200 V, N-CHANNEL IGBT 75 A, 1000 V, N-CHANNEL IGBT 200 A, 1000 V, N-CHANNEL IGBT 50 A, 1600 V, N-CHANNEL IGBT
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INFINEON TECHNOLOGIES AG SIEMENS A G
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HGTP2N120BND HGT1S2N120BNDS HGT1S2N120BNDS9A |
12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(12A, 1200V, NPT系列N沟道绝缘栅双极型晶体 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 2 A, 1200 V, N-CHANNEL IGBT, TO-220AB 12 A, 1200 V, N-CHANNEL IGBT, TO-263AB
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INTERSIL[Intersil Corporation] Intersil, Corp.
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CM75DU-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM75DY-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
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Powerex Power Semicondu... Powerex Power Semiconductors Powerex, Inc.
|
CM50DU-24F |
Trench Gate Design Dual IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
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APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
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APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
2MBI225U4J-120-50 AN28F256A-150 AN28F256A-120 AP28 |
x8 Flash EEPROM IGBT Module 300 A, 1200 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
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2MBI75UA-120 |
100 A, 1200 V, N-CHANNEL IGBT IGBT Module U-Series 1200V / 75A 2 in one-package
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FUJI ELECTRIC CO LTD List of Unclassifed Manufacturers
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